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19-nm Memory Toshiba hints at the 128 GB modules for mobile phones?

Toshiba has introduced solid state drives, built using 19-nanometer manufacturing process. Modules are built according to the scheme two bits per cell and 8 GB per chip, which allows to halve the total size of the memory module. This transition allows, respectively, and double the amount of memory built into the device - in place of the old 64 GB you can put the chipset of the 16 chips, which will get a smartphone or tablet with 128 GB of internal memory, which does not require a larger internal volume. Besides the new memory modules slightly "faster" the previous generation - the use of technology Toggle DDR2.0 allows you to quickly search and read data.

As stated representatives of Toshiba, in the not very distant future, these memory modules can be used and the scheme of three bits per cell, which would seal records and increase the amount of memory without increasing the physical dimensions of the modules. Despite the fact that the data memory chipsets are new, they have already arrived to the manufacturers for testing equipment. Mass scale production should begin in the summer. With respect to companies who will use them, the range is rather wide - from actually Toshiba, to its permanent customer Apple. Nevertheless, it is doubtful that in the near future the market will be flooded with mobile devices with more memory - buyers will not help to stop a much greater price. Currently, the vast majority of devices on the market have built-in memory to 32 GB, though there are more capacious model.

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