Samsung begins the release 40- nm of 4 GB DDR3 of memory

The company Of samsung declared about the beginning of the production of the first in the world microcircuits of working storage DDR3 volume 4 GB, executed according to the standards 40- nm of process. Given modules will be characterized by not only large volume, but also ensure an increase in the energy effectiveness of servers and highly productive laptop computers. On the plans with respect to the production of data of the modules of memory the company for the first time stated in July last year. New, “green memory” will ensure reduction in the energy consumption to 35%, it was possible to attain what because of the doubling of density.

First of all the 40- nm of 4 GB DDR3 memory is intended for the servers, who at the present moment have usually on six joints for the working storage, which corresponds to maximum volume in 96 GB. In this case the module of memory DDR2 with the density of 1 Gbit, prepared according to the standards 60 nm, consumes 210 W, DDR3 with the density of 2 Gbit, prepared according to the standards 40 nm, consumes 55 W, and required power 4 GB DDR3 from Samsung is equal to 36 W. Which composes only 17% of DDR2 on the elements with a density of 1 Gbit, prepared according to the standards 60 nm.

For the users of laptop computers the introduction of new memory indicates a two-fold increase in the maximum volume of working storage - for the module this SO-DIMM it indicates to 8 GB. Soon the company Of samsung plans to transfer on the 40- nm process to 90% of entire produced BY DDR memory.