Samsung and Toshiba will standardize specification NAND for rapid DDR of memory

The companies Of samsung and Toshiba support initiative on the standardization of specification NAND for the [resursoemkikh] applications. The new specifications NAND of switching DDR 2.0 it will correspond TO DDR of [flesh] of memory with the interface to 400 [Mb]/[s]. previously explosive this month Of toshiba it already declared about that which will be occupied by the production of [fleshevoy] NAND of memory together with SanDisk.

Now there are specifications of the switching DDR 1.0, which use a usual interface DDR with the only speed of transmission of data OF NAND. In these devices the interface ensures transfer to 133 [Mb]/[s]. new specifications with switching 2.0 will have an interface of 400[MB]/[s], which will give a triple increase in the speed in the comparison with the specifications DDR 1.0. New NAND the memory with specifications 2.0 will give tenfold increase in the comparison from 40 [Mb]/[s] of the only speed of transmission, which still is used in NAND. The uniformity of specifications will accelerate their introduction and will allow the developers of applications to create general routines for production of both companies.