Samsung has announced the start of mass production of 20-nanometer memory modules DDR4

Samsung Electronics has announced the launch of series production of memory modules DDR4, designed primarily for corporate servers , working in the centers of processing data ( DPC ) of the next generation.

As the producer, with new high-performance memory modules vysokoemkostnyh DDR4, it will be able to meet the market demand for advanced DDR4-solutions for data center and enterprise servers .

Earlier appearance on the market of 4-gigabit (Gb) DDR4 devices created on the basis of the 20-nanometer process technology, will contribute to the growth of demand for the memory capacity of 16 gigabytes (GB) and 32 GB, which in the future will be able to replace conventional DRAM memory capacity of 8 GB based on 30 nm process, which are most common at the moment.

The use of high-speed DRAM memory chips in the work of the next generation of enterprise servers significantly improves system performance and reduces power consumption. Applying technology DDR4 memory at an early stage, OEMs can minimize operating costs and significantly increase productivity, ensuring thus a more rapid return on investment.

Data transfer rate of 4-gigabit DDR4 memory chip is 2667 Mbit / s, which is 1.25 times the speed of the modules DDR3, which also uses 20-nanometer chip class. This chip consumption reduced by more than 30%.