Micron announces co-development with Nanya, updates 34nm NAND process

Micron Technology has announced that it has jointly developed a low-power DDR2 (LPDDR2) DRAM technology with Nanya Technology for mobile and consumer applications, with initial die densities up to 1Gb. The mobile LPDDR2 technology operates at 1.2 volts and provides as much as a 50% power reduction when compared to a low-power DDR chip.

In addition, Micron also said that it is currently sampling NAND-based multi-chip package (MCP), a solution including 16GB of multi-level cell (MLC) NAND, for high-end mobile phones.

Micron will separately introduce its mobile low-power DDR2 portfolio for applications including handsets, smartphones and mobile internet devices (MIDs), through its joint development with Nanya. Micron's mobile LPDDR2 portfolio includes 512 megabit (Mb) and 1Gb die, reaching 4Gb solutions.

Micron is now sampling its 1Gb mobile LPDDR2 solutions and expects to kick off the production in the second half of 2009, according to the company.

Along with its DRAM co-development announcement with Nanya, Micron said that its NAND-based MCP solution has now entered the sampling stage, with production ready in the first quarter of 2009. The new all-in-one MCP leverages Micron's 32-gigabit (Gb) 34nm MLC NAND technology and stacks eight die to deliver up to 16GBs of on-board storage.