Samsung vypus start of the smallest chips capacity of 2 Gbit DDR3
The company Samsung Electronics announced the testing of the smallest devices DDR3 capacity of 2 Gb. By using 50-nanometer technology performance of new devices by 60% over the figure for DDR2 devices is the same density. The use of new DDR3 components of a capacity of 2 GB to create modules RIMM up to 16 GB and lead to savings of more than 40% of the electricity compared with DDR3 memory capacity of 1 GB.
Through the small form factor of new devices in RIMM modules can be used memory chips up to 8 GB, and SODIMM modules and UDIMM - up to 4 GB without imposing components. In addition, through the use of twin packs components DDR3 capacity of 2 GB can be designed in modules RIMM up to 16 GB.
Whole chips capacity of 2 GB is an effective solution in terms of energy consumption for applications with intensive use of memory. Chips a 2 GB come to replace the chip with twin decisions to 1 GB, that can reduce electricity consumption by at least 40%, and it is essential for server applications, as well as for desktop computers and laptops new generation. The device supports a capacity of 2 GB data transfer rate up to 1.3 Gb / s at 1.5 or 1.35 V, which approximately 1.6 times faster than a set of modules based on the dual capacity of 1 GB of data transfer speeds of 800 Mb / sec. In addition, by reducing the number of chips DDR3 achieved less heat.
According to market research conducted by IDC, the percentage of DDR3 memory will soon be up 29% of the total market for DRAM, for by 2011 it will reach 72%. Segment devices capacity of 2 GB is projected to grow from 3% in 2009 to 33% in 2011
Through the small form factor of new devices in RIMM modules can be used memory chips up to 8 GB, and SODIMM modules and UDIMM - up to 4 GB without imposing components. In addition, through the use of twin packs components DDR3 capacity of 2 GB can be designed in modules RIMM up to 16 GB.
Whole chips capacity of 2 GB is an effective solution in terms of energy consumption for applications with intensive use of memory. Chips a 2 GB come to replace the chip with twin decisions to 1 GB, that can reduce electricity consumption by at least 40%, and it is essential for server applications, as well as for desktop computers and laptops new generation. The device supports a capacity of 2 GB data transfer rate up to 1.3 Gb / s at 1.5 or 1.35 V, which approximately 1.6 times faster than a set of modules based on the dual capacity of 1 GB of data transfer speeds of 800 Mb / sec. In addition, by reducing the number of chips DDR3 achieved less heat.
According to market research conducted by IDC, the percentage of DDR3 memory will soon be up 29% of the total market for DRAM, for by 2011 it will reach 72%. Segment devices capacity of 2 GB is projected to grow from 3% in 2009 to 33% in 2011
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