Toshiba, IBM and AMD have developed a miniature element of memory
Toshiba, IBM and AMD have announced that they have jointly developed an element of static random sample memory (Static Random Access Memory, SRAM), an area which is only 0128 square microns.
Mikromoduli SRAM are schema elements of most large-scale integrated circuit system level, such as microprocessors. A miniature elements SRAM can contribute to the emergence of smaller and faster processors, which are, moreover, consume less electricity.
Researchers Toshiba, IBM and AMD created the Super Mini element FinFET SRAM using innovative semiconductor technology HKMG. This is a very small, ever created, SRAM memory cell based neplanarnyh field-effect transistor, with an area of 0128 square microns. The new integrated element of SRAM more than 50% lower than its previous analogue covers an area of 0274 square microns.
Based on the successful establishment of a Super Mini elements FinFET SRAM memory using HKMG, the company Toshiba, IBM and AMD technology field position transistors «plavnikovogo» type (FinFET) as a very promising transistor structure for the memory SRAM, manufactured using 22-nano (and below ) Technological standards. New innovative technologies FinFET is an important step towards a more powerful and small electronic devices.
Mikromoduli SRAM are schema elements of most large-scale integrated circuit system level, such as microprocessors. A miniature elements SRAM can contribute to the emergence of smaller and faster processors, which are, moreover, consume less electricity.
Researchers Toshiba, IBM and AMD created the Super Mini element FinFET SRAM using innovative semiconductor technology HKMG. This is a very small, ever created, SRAM memory cell based neplanarnyh field-effect transistor, with an area of 0128 square microns. The new integrated element of SRAM more than 50% lower than its previous analogue covers an area of 0274 square microns.
Based on the successful establishment of a Super Mini elements FinFET SRAM memory using HKMG, the company Toshiba, IBM and AMD technology field position transistors «plavnikovogo» type (FinFET) as a very promising transistor structure for the memory SRAM, manufactured using 22-nano (and below ) Technological standards. New innovative technologies FinFET is an important step towards a more powerful and small electronic devices.
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