Samsung starts serial production of GDDR5 based on 50 nm process
Samsung Electronics Company announced the start of serial production of high-performance GDDR5 memory, based on 50 nm process technology. New Samsung memory supports a maximum data transfer rate 7.0 Gb / sec. (gigabits per second) that allows you to create a more realistic (three dimensional) graphics with a maximum bandwidth 28 GB / sec. (gigabytes per second) - this is more than twice the previous rate of the fastest model, GDDR4 (12,8 GB / sec.). This rate equals the transfer of nineteen film DVD-quality volume of 1.5 GB each for one second.
Unlike standard GDDR4, in which data-processing and graphics technology used strobiruyuschih synchronization and clock pulses, a significant increase in the speed of GDDR5 is achieved through the use of an independent master oscillator, which does not require synchronization of read-write with clock pulses.
The introduction of 50 nm production methods, it is estimated the company Samsung, will improve the efficiency of production by 100% compared to 60 nm production methods. In addition, the chips GDDR5, working with the supply voltage 1.35 V, consuming 20% less electricity than devices GDDR4 (1,8 B).
The new devices are offered in modules of 32 megabita (Mbps) x32, but can also be configured 64 Mbit h32. It was expected that the proportion of GDDR5 graphics memory on the market in 2009 will exceed 20%. Samsung representatives were also informed that the company plans to convert all video production devices in the 50-nanometer production methods by the end of this year.
Unlike standard GDDR4, in which data-processing and graphics technology used strobiruyuschih synchronization and clock pulses, a significant increase in the speed of GDDR5 is achieved through the use of an independent master oscillator, which does not require synchronization of read-write with clock pulses.
The introduction of 50 nm production methods, it is estimated the company Samsung, will improve the efficiency of production by 100% compared to 60 nm production methods. In addition, the chips GDDR5, working with the supply voltage 1.35 V, consuming 20% less electricity than devices GDDR4 (1,8 B).
The new devices are offered in modules of 32 megabita (Mbps) x32, but can also be configured 64 Mbit h32. It was expected that the proportion of GDDR5 graphics memory on the market in 2009 will exceed 20%. Samsung representatives were also informed that the company plans to convert all video production devices in the 50-nanometer production methods by the end of this year.
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